STL60N10F7 datasheet(3/16 Pages) STMICROELECTRONICS

部件名	STL60N10F7

功能描述	N-channel 100 V, 0.0145 Ω typ., 12 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 16 page

DocID024453 Rev 3

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STL60N10F7

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

100

VGS

Gate-source voltage

(1)

This value is rated according to Rthj-c.

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

(2)

This value is rated according to Rthj-pcb.

Drain current (continuous) at Tpcb = 25 °C

(2)

Drain current (continuous) at Tpcb =100 °C

IDM

(2)(3)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

(1)

Total dissipation at Tc = 25 °C

PTOT

(2)

Total dissipation at Tpcb = 25 °C

Operating junction temperature

-55 to 175

°C

Tstg

Storage temperature

°C

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-pcb

(1)

When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec

Thermal resistance junction-pcb

°C/W

Rthj-c

Thermal resistance junction-case

2.08

°C/W

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