STN1802 datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

THERMAL DATA

Rthj-amb

Thermal Resistance Junction-Ambient

Max

oC/W

• Device mounted on a PCB area of 1 cm2 .

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 40 V

0.1

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 4 V

0.1

µA

V(BR)CBO

∗ Collector-Base

Breakdown Voltage

(IE = 0)

IC = 10

µA

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 1 mA

V(BR)EBO

∗ Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 10

µA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 100 mA

IC = 3 A

IB = 150 mA

150

200

300

400

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 2 A

IB = 100 mA

0.9

1.2

hFE

∗

DC Current Gain

IC = 100 mA

VCE = 2 V

IC = 3 A

VCE = 2 V

200

100

400

Transition frequency

VCE = 10 V

IC = 50 mA

150

MHz

CCBO

Collector-Base

Capacitance

VCB = 10 V

f = 1 MHz

tON

RESISTIVE LOAD

Turn- on Time

Storage Time

Fall Time

IC = 1 A

VCC = 30 V

IB1 = - IB2 = 0.1 A

1.35

120

∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %

STN1802

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