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STODD03 数据表(PDF) 9 Page - STMicroelectronics

部件名 STODD03
功能描述  Monolithic 2-channel power management for high-definition ODD with integrated power switch
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STODD03 数据表(HTML) 9 Page - STMicroelectronics

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STODD03
Electrical characteristics
Doc ID 018980 Rev 1
9/16
Step-down section
FB2
Feedback voltage
TJ = 0 to 85 °C
3.23
3.3
3.37
V
IFB2
FB2 pin bias current
VFB2 = 3.5 V
15
20
µA
IOUT2
Output current (2) (3)
VIN = 4 to 6 V
700
mA
IOUT_MIN
Minimum output current
0
mA
ΔV
OUT2
Reference load regulation (2) 10 mA < IOUT2 < 0.5 A
5.5
15
mV
PWM fS
PWM switching frequency
1.2
MHz
%VOUT2/ΔVIN Reference line regulation
4 V < VIN < 6 V
0.032
%VOUT
/VIN
DMAX
Maximum duty cycle
VFB2 = 3.0 V
85
94
%
ISWL
Switching current limitation
1.5
A
ILKP2
PMOS leakage current
VFB2 = 3.5 V, VSW2 = GND,
TJ = 0 to 80 °C
0.1
µA
ILKN2
NMOS leakage current
VFB2 = 3.5 V, VSW2 = 5 V,
TJ = 0 to 80 °C
0.1
µA
RDSon-N
NMOS switch-on resistance
ISW = 250 mA
0.2
Ω
RDSon-P
PMOS switch-on resistance
ISW = 250 mA
0.3
Ω
ΔV
OUT2/
ΔI
OUT2
Load transient response (2)
100 mA < IOUT2 < 500 mA,
tR = tF => 100 ns, TJ = 25 °C
-5
+5
%VOUT
ν
Efficiency
VOUT = 3.3 V, IOUT = 100 mA
75
%
VOUT = 3.3 V, IOUT = 500 mA
85
VEN2_H
Enable threshold high
VIN = 4 to 6 V
1.2
V
VEN2_L
Enable threshold low
VIN = 4 to 6 V
0.4
IEN2
Enable pin current
VEN2 = VIN = 5 V
2
µA
Power switch section
RDSon-P
PMOS switch-on resistance
ISW = 250 mA
0.3
Ω
ISW
Switching operating current
1
A
ILKSW
Switching leakage current
EN_SW = EN_SW = H,
TJ = 0 to 80 °C
1µA
VIN_PSW
Input voltage range
4
6
V
VEN_SW_H
Enable pins threshold high
VIN = 4 to 6 V
1.2
V
VEN_SW_L
Enable pins threshold low
VIN = 4 to 6 V
0.4
IEN_SW
Enable pins current
VEN_SW = VIN = 5 V
2
µA
Table 8.
Electrical characteristics (continued)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit



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