STP13N65M2 datasheet(3/16 Pages) STMICROELECTRONICS

部件名	STP13N65M2

功能描述	N-channel 650 V, 0.37 Ω typ.,10 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 16 page

DocID026894 Rev 1

3/16

STP13N65M2, STU13N65M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

6.3

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

110

dv/dt(2)

ISD ≤ 10 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V

Peak diode recovery voltage slope

V/ns

dv/dt(3)

VDS ≤ 520 V

MOSFET dv/dt ruggedness

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-220

IPAK

Rthj-case

Thermal resistance junction-case max

1.14

°C/W

Rthj-amb

Thermal resistance junction-ambient

max

62.5

100

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

1.8

EAS

Single pulse avalanche energy (starting

Tj =25 °C, ID =IAR; VDD =50V)

350

STP13N65M2 数据表(PDF) 3 Page - STMicroelectronics

STP13N65M2 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

数据表下载

链接网址

STP13N65M2 数据表(PDF) 3 Page - STMicroelectronics

STP13N65M2 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

数据表 下载

链接网址

数据表下载