STP80N6F6 datasheet(4/12 Pages) STMICROELECTRONICS

部件名	STP80N6F6

功能描述	Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 12 page

Electrical characteristics

STP80N6F6

4/12

DocID023470 Rev 2

Electrical characteristics

CASE

= 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)DSS

Drain-source breakdown

voltage (V

= 0)

= 250 μA60

DSS

Zero gate voltage

Drain current (V

= 0)

= 60 V

μA

= 60 V, T

=125 °C

100

μA

GSS

Gate-body leakage

current (V

= 0)

= ± 20 V

± 100

GS(th)

Gate threshold voltage

= V

, I

= 250 μA3

4.5

DS(on)

Static drain-source

on-resistance

= 10 V, I

= 40 A

4.4

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

iss

Input capacitance

= 25 V, f = 1 MHz,

= 0

8325

oss

Output capacitance

500

rss

Reverse transfer

capacitance

-400

Total gate charge

= 30 V, I

= 80 A,

= 10 V

-147

Gate-source charge

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d(on)

Turn-on delay time

= 30 V, I

= 40 A

=4.7

Ω V

= 10 V

-40

Rise time

d(off)

Turn-off-delay time

132

Fall time

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