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STP240N10F7 数据表(PDF) 4 Page - STMicroelectronics |
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STP240N10F7 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 13 page ![]() Electrical characteristics STP240N10F7 4/13 DocID023934 Rev 3 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS= 0, ID = 250 µA 100 V IDSS Zero gate voltage drain current VGS = 0, VDS= 100 V 1 µA VGS = 0, VDS= 100 V, TC= 125°C 100 µA IGSS Gate body leakage current VDS = 0, VGS = +20 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2.5 4.5 V RDS(on) Static drain-source on-resistance VGS= 10 V, ID= 60 A 2.85 3.2 m Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz - 11550 - pF Coss Output capacitance - 2950 - pF Crss Reverse transfer capacitance -217 - pF Qg Total gate charge VDD = 50 V, ID = 110 A, VGS = 10 V (see Figure 14) -160 - nC Qgs Gate-source charge - 48 - nC Qgd Gate-drain charge - 38 - nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 50 V, ID = 90 A RG =4.7 Ω VGS = 10 V (see Figure 13, Figure 18) -49 - ns tr Rise time - 139 - ns td(off) Turn-off delay time - 110 - ns tf Fall time - 112 - ns |
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