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STPS80H100C 数据表(PDF) 4 Page - STMicroelectronics |
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STPS80H100C 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() Characteristics STPS80H100C 4/7 Doc ID 6727 Rev 3 Figure 9. Forward voltage drop versus forward current (maximum value, per diode) Figure 7. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 8. Junction capacitance versus reverse voltage applied (typical values, per diode) 0 10203040 5060708090 100 1E-1 1E+0 1E+1 1E+2 1E+3 1E+4 VR(V) IR(µA) Tj=125°C Tj=25°C 1 2 5 10 20 50 100 0.1 1.0 5.0 VR(V) C(nF) F=1MHz Tj=25°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 500 VFM(V) IFM(A) Tj=25°C Tj=125°C |
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