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STPS6045C 数据表(PDF) 2 Page - STMicroelectronics |
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STPS6045C 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STPS6045C 2/9 DocID4606 Rev 8 Characteristics When the diodes 1 and 2 are simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) RMS forward current 60 A IF(AV) Average forward current δ = 0.5 Tc = 150 °C per diode 30 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 400 A IRRM Repetive peak reverse current tp = 2 µs square F = 1 kHz 1A IRSM Non repetitive peak reverse current tp = 100 µs square 3 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 10600 W Tstg Storage temperature range - 65 to + 175 °C Tj Maximum operating junction temperature(1) 1. condition to avoid thermal runaway for a diode on its own heatsink 175 °C dV/dt Critical rate of rise or reverse voltage 10000 V/µs Table 3. thermal resistances Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode Total 0.95 0.55 °C/W Rth(c) Coupling 0.15 dPtot dTj --------------- 1 Rth j a – -------------------------- |
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