STPSC40065C datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STPSC40065C

2/9

DocID027965 Rev 3

Characteristics

Table 2: Absolute ratings per diode (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

IF(RMS)

Forward rms current

IF(AV)

Average forward current

Tc = 140 °C(1), DC, per diode

Tc = 130 °C(1), DC, per device

IFRM

Repetitive peak forward

current

Tc =140 °C, Tj

= 175 °C, δ = 0.1

IFSM

Surge non repetitive

forward current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

400

Tstg

Storage temperature range

-55 to +175

°C

Operating junction temperature range(2)

-40 to +175

°C

Notes:

(1)Value based on Rth(j-c) max.

(2)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

0.90

°C/W

Total

0.60

Rth(c)

Coupling

0.30

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

300

µA

Tj = 150 °C

280

2000

Tj = 25 °C

VR = 600 V

150

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 20 A

1.30

1.45

Tj = 150 °C

1.45

1.65

Tj = 175 °C

1.50

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 500 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.02 x IF(AV) + 0.039 x IF²(RMS)

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