September 2016

DocID027965 Rev 3

1/9

This is information on a product in full production.

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STPSC40065C

650 V power Schottky silicon carbide diode

Datasheet - production data

Features



No reverse recovery charge in application

current range



Switching behavior independent of

temperature



Dedicated to PFC applications



Description

The SiC diode is a high voltage power Schottky

diode. It is manufactured using a silicon carbide

substrate. The wide band gap material allows the

design of a Schottky diode structure with a 650 V

rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns

are negligible. The minimal capacitive turn-off

behavior is independent of temperature.

Used as a freewheeling or output rectification

diode, this rectifier will enhance the performance

and form factor of the targeted power supply or

inverter.

Table 1: Device summary

Symbol

Value

2 x 20 A

650 V

175 °C

1.30 V

A1

K

A2

TO-247

A1

K

A2