Obsolete

Product(s)

- Obsolete

Product(s)

STS5DPF20L

2/9

Table 3: Absolute Maximum ratings

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

Table 4: Thermal Data

Table 5: On/Off

Table 6: Dynamic

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Symbol

Parameter

Value

Unit

20

V

20

V

Gate- source Voltage

± 16

V

Single Operating

5A

Single Operating

4A

Drain Current (pulsed)

20

A

1.6

2

W

W

Operating Junction Temperature

Storage Temperature

150

-55 to 150

°C

°C

Rthj-case

Thermal Resistance Junction-case Single Operating

Dual Operating

62.5

78

°C/W

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max

Unit

Drain-source

Breakdown Voltage

20

V

Zero Gate Voltage

1

10

µA

µA

Gate-body Leakage

±100

nA

Gate Threshold Voltage

11.6

2.5

V

Static Drain-source On

Resistance

0.045

0.070

0.055

0.075

Ω

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Forward

Transconductance

10

S

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

1350

490

130

pF

pF

pF