September 2016

DocID025027 Rev 3

1/13

This is information on a product in full production.

www.st.com

STT3P2UH7

P-

channel 20 V, 0.087 Ω typ., 3 A STripFET™ H7

Power MOSFET in a SOT23-6L package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

STT3P2UH7

20 V

0.1 Ω @ 4.5

3 A



Very low on-resistance



Very low capacitance and gate charge



High avalanche ruggedness

Applications



Switching applications

Description

This P-channel Power MOSFET utilizes the

STripFET H7 technology with a trench gate

structure combined with extremely low on-

resistance. The device also offers ultra-low

capacitances for higher switching frequency

operations.

Table 1: Device summary

Order code

Marking

Package

Packaging

STT3P2UH7

3L2U

SOT23-6L

Tape and reel

For the P-channel Power MOSFET, current and voltage polarities are reversed.

SOT23-6L