STTH15AC06C datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

STTH15AC06C

4/11

DocID024884 Rev 1

Figure 5. Relative variation of thermal

impedance, junction to case, versus pulse

duration (TO-220FPAB)

Figure 6. Peak reverse recovery versus dIF/dt

(typical values, per diode)

Zth( j-c) /Rth( j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

t(s)

TO- 220FPAB

Single pulse

50 100 150 200 250 300 350 400 450 500

IRM (A)

dIF/dt(A/µs)

IF = 7.5 A

R = 400 V

Tj = 125 °C

Figure 7. Reverse recovery time versus dIF/dt

(typical values, per diode)

Figure 8. Reverse recovery charges versus

dIF/dt (typical values, per diode)

100

150

200

250

300

350

400

50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

IF = 7.5 A

R = 400 V

Tj = 125 °C

(ns)

100

200

300

400

500

600

100

150

200

250

300

350

400

450

500

(nC)

dIF/dt(A/µs)

IF = 7.5 A

R = 400 V

Tj = 125 °C

Figure 9. Reverse recovery softness factor

versus dIF/dt (typical values, per diode)

Figure 10. Relative variations of dynamic

parameters versus junction temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

100

150

200

250

300

350

400

450

500

SFACTOR

IF = 7.5 A

R = 400 V

Tj = 125 °C

dIF/dt(A/µs)

0.0

0.5

1.0

1.5

2.0

100

125

S FACTOR

Tj(°C)

F = 30 A; VR = 400 V

Reference: Tj = 125 °C

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