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STTH50W03C 数据表(PDF) 2 Page - STMicroelectronics

部件名 STTH50W03C
功能描述  Low reverse recovery current
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH50W03C 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH50W03C
2/9
DocID024734 Rev1
1
Characteristics
When diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.9 x IF(AV) + 0.012 IF
2
(RMS)
Table 2. Absolute ratings (limiting values per diode, at 25 °C, unless otherwise
specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
300
V
IF(RMS) Forward rms current
40
A
IF(AV)
Average forward current,
 = 0.5
Tc = 105 °C
Per diode
25
A
Tc = 100°C
Per device
50
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
200
A
Tstg
Storage temperature range
-65 to + 175
° C
Tj
Maximum operating junction temperature
+ 175
° C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
1.8
°C / W
Total
1
Rth(c)
Coupling
0.2
Table 4. Static electrical characteristics per diode
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms,  < 2%
Reverse leakage
current
Tj = 25 °C
VR = VRRM
15
µA
Tj = 125° C
15
150
VF
(2)
2.
Pulse test: tp = 380 µs,  < 2%
Forward voltage drop
Tj = 25° C
IF = 25 A
1.5
V
Tj = 150 °C
1.0
1.2
Tj = 25° C
IF = 50 A
1.8
Tj = 150° C
1.25
1.5



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