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STTH50W03C 数据表(PDF) 2 Page - STMicroelectronics |
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STTH50W03C 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STTH50W03C 2/9 DocID024734 Rev1 1 Characteristics When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) To evaluate the conduction losses use the following equation: P = 0.9 x IF(AV) + 0.012 IF 2 (RMS) Table 2. Absolute ratings (limiting values per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) Forward rms current 40 A IF(AV) Average forward current, = 0.5 Tc = 105 °C Per diode 25 A Tc = 100°C Per device 50 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 200 A Tstg Storage temperature range -65 to + 175 ° C Tj Maximum operating junction temperature + 175 ° C Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode 1.8 °C / W Total 1 Rth(c) Coupling 0.2 Table 4. Static electrical characteristics per diode Symbol Parameter Test conditions Min. Typ Max. Unit IR (1) 1. Pulse test: tp = 5 ms, < 2% Reverse leakage current Tj = 25 °C VR = VRRM 15 µA Tj = 125° C 15 150 VF (2) 2. Pulse test: tp = 380 µs, < 2% Forward voltage drop Tj = 25° C IF = 25 A 1.5 V Tj = 150 °C 1.0 1.2 Tj = 25° C IF = 50 A 1.8 Tj = 150° C 1.25 1.5 |
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