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STTH802C 数据表(PDF) 2 Page - STMicroelectronics |
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STTH802C 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STTH802C 2/9 DocID8723 Rev 3 1 Characteristics When the diodes 1 and 2 are used simultaneously: T j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) To evaluate the conduction losses, use the following equation: P = 0.80 x IF(AV) + 0.037 x IF 2 (RMS) Table 2. Absolute ratings (limiting values at Tj = 25 °C per diode, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) Forward rms current 10 A IF(AV) Average forward current, = 0.5, square wave Tc = 155 °C Per diode 4 A Tc = 150 °C Per device 8 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 50 A Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature 175 °C Table 3. Thermal resistances Symbol Parameter Max. value Unit Rth(j-c) Junction to case Per diode 4 °C/W Total 2.5 Rth(c) Coupling 1.0 Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM -4 µA Tj = 125 °C - 2 40 VF (2) Forward voltage drop Tj = 25 °C IF = 4 A -1.10 V Tj = 125 °C - 0.81 0.95 Tj = 25 °C IF = 8 A -1.25 Tj = 125 °C - 0.95 1.10 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 µs, < 2% |
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