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STTH802C 数据表(PDF) 2 Page - STMicroelectronics

部件名 STTH802C
功能描述  Low forward and reverse recovery time
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH802C 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH802C
2/9
DocID8723 Rev 3
1
Characteristics
When the diodes 1 and 2 are used simultaneously:
 T
j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses, use the following equation:
P = 0.80 x IF(AV) + 0.037 x IF
2
(RMS)
Table 2. Absolute ratings (limiting values at Tj = 25 °C per diode, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
200
V
IF(RMS) Forward rms current
10
A
IF(AV)
Average forward current,
 = 0.5, square wave
Tc = 155 °C
Per diode
4
A
Tc = 150 °C
Per device
8
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
50
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature
175
°C
Table 3. Thermal resistances
Symbol
Parameter
Max. value
Unit
Rth(j-c)
Junction to case
Per diode
4
°C/W
Total
2.5
Rth(c)
Coupling
1.0
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-4
µA
Tj = 125 °C
-
2
40
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 4 A
-1.10
V
Tj = 125 °C
-
0.81
0.95
Tj = 25 °C
IF = 8 A
-1.25
Tj = 125 °C
-
0.95
1.10
1.
Pulse test: tp = 5 ms,  < 2%
2.
Pulse test: tp = 380 µs,  < 2%



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