STX1F10 datasheet(3/9 Pages) STMICROELECTRONICS

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STX1F10

Electrical characteristics

Doc ID 15854 Rev 1

3/9

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

2.1

Typical characteristic

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE =0)

VCE = 980 V

VCE = 980 V; TC =125 °C

0.5

µA

ICEO

Collector cut-off current

(IB =0)

VCE = 400 V

250

µA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 1 mA

VCEO(sus)

(1)

Pulsed duration = 300 µs, duty cycle

≤ 1.5%.

Collector-emitter

sustaining voltage (IB = 0)

IC = 10 mA

400

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 0.3 A

IB = 60 mA

IC = 1 A

IB = 0.2 A

0.15

0.3

0.5

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 1 A

IB = 0.2 A

1.1

1.5

hFE

DC current gain

IC = 500 µA

VCE = 2 V

IC = 0.45 A

VCE = 5 V

IC = 1 A

VCE = 5 V

Resistive load

Storage time

Fall time

VCC = 125 V

IC = 1 A

IB(on) = -IB(off) = 200 mA

tp = 300 µs VBE(off) = - 5 V

2.5

350

µs

Figure 2.

Safe operating area

Figure 3.

Derating curve

Obsolete

Product(s)

- Obsolete

Product(s)

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