T1610H datasheet(5/9 Pages) STMICROELECTRONICS

部件名	T1610H

功能描述	High thermal cycling performance

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

5 / 9 page

DocID024630 Rev 1

5/9

T1610H

Characteristics

Figure 13. Relative variation of leakage current versus junction temperature for different values of

blocking voltage (typical values)

Figure 11. Non repetitive surge peak on-state

current for a sinusoidal pulse with width

tp < 10 ms, and corresponding value of I²t

Figure 12. On-state characteristics (maximum

values)

(A), I²t (A²s)

TSM

100

1000

10000

0.01

0.10

1.00

10.00

dI/dt limitation: 100 A/µs

ITSM

I²t

Tj initial=25 °C

t (ms)

sinusoidal pulse with width t <10 ms

ITM (A)

100

1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

Tj max :

Vto = 0.80 V

Rd = 22 m

Tj=25 °C

Tj=150 °C

VTM (V)

, I

[T ; V

, V

] / I

, I

[T = 150 °C; 600 V]

DRM

RRM

DRM

RRM

DRM

RRM

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

100

125

150

VDRM=VRRM=600 V

VDRM=VRRM=400 V

VDRM=VRRM=200 V

T (°C)

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