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TIP41CN 数据表(PDF) 2 Page - STMicroelectronics |
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TIP41CN 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Obsolete Product(s) - Obsolete Product(s) TIP41CN / TIP42CN 2/8 For PNP types voltage and current values are negative. Table 3: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 2 %. For PNP types voltage and current values are negative. # Note: Product is pre-selected in DC current gain (Group R, Group O and Group Y). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery details. IB Base Current 3A Ptot Total Dissipation at TC ≤ 25 oC 65 W Tstg Storage Temperature -65 to 150 °C TJ Max. Operating Junction Temperature 150 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEO Collector Cut-off Current (IB = 0) VCE = 60 V 0.7 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 1 mA ICES Collector Cut-off Current (VBE = 0) VCE = 100 V 0.4 mA VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0 ) IC = 30 mA 100 V VCE(sat)* Collector-Emitter Saturation Voltage IC = 6 A IB = 0.6 A 1.5 V VBE(on)* Base-Emitter Voltage IC = 6 A VCE = 4 V 2 V hFE* DC Current Gain IC = 0.3 A VCE = 4 V IC = 3 A VCE = 4 V Group R Group O Group Y 30 15 24 42 28 44 75 Symbol Parameter Value Unit NPN TIP41CN PNP TIP42CN |
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