DocID18270 Rev 2

3/8

TPDVxx40

Characteristics

8

Table 4. Gate characteristics (maximum values)

Symbol

Parameter

Value

Unit

Average gate power dissipation

1

W

Peak gate power dissipation

40

W

Peak gate current

8

A

Peak positive gate voltage

16

V

Table 5. Thermal resistance

Symbol

Parameter

Value

Unit

Junction to ambient

50

°C/W

Junction to case for DC

1.2

°C/W

Junction to case for 360 °conduction angle (F = 50 Hz)

0.9

°C/W

Figure 1. Max. rms power dissipation versus

on-state rms current (F = 50 Hz)

(curves limited by (dI/dt)c)

Figure 2. Max. rms power dissipation and max.

Figure 3. On-state rms current versus case

temperature

Figure 4. Relative variation of thermal

impedance versus pulse duration