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TPDV1240RG 数据表(PDF) 2 Page - STMicroelectronics

部件名 TPDV1240RG
功能描述  40 A high voltage Triacs
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TPDV1240RG 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
TPDVxx40
2/8
DocID18270 Rev 2
1
Characteristics
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
On-state rms current (180° conduction angle)
Tc = 75 °C
40
A
ITSM
Non repetitive surge peak on-state
current
tp = 2.5 ms
Tj = 25 °C
590
A
tp = 8.3 ms
370
tp = 10 ms
350
I2tI2t value for fusing
tp = 10 ms
Tj = 25 °C
610
A2S
dI/dt
Critical rate of rise of on-state current
IG = 500 mA; dlG/dt = 1 A/µs
Repetitive F = 50 Hz
20
A/µs
Non repetitive
100
VDRM
VRRM
Repetitive peak off-state voltage
TPDV640
Tj = 125 °C
600
V
TPDV840
800
TPDV1240
1200
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
-40 to +150
-40 to +125
°C
TL
Maximum lead temperature for soldering during 10 s at 2 mm from case
260
°C
VINS(RMS)
(1)
Insulation rms voltage
2500
V
1. A1, A2, gate terminals to case for 1 minute
Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test condition
Quadrant
Value
Unit
IGT
VD = 12 V DC, RL = 33 Ω
I - II - III
Max.
200
mA
VGT
Max.
1.5
V
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 125 °C
I - II - III
Min.
0.2
V
tgt
VD = VDRM IG = 500 mA dlG/dt = 3A/µs
I - II - III
Typ.
2.5
µs
IH (1)
IT = 500 mA Gate open
Typ.
50
mA
IL
IG = 1.2 x IGT
I - III
Typ.
100
mA
II
200
dV/dt
Linear slope up to :
VD = 67% VDRM Gate open
Tj = 125 °C
Min.
500
V/µs
VTM (1)
ITM = 56 A tp = 380 µs
Max.
1.8
V
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C
Max.
20
µA
Tj = 125 °C
8
mA
(dI/dt)c (1)
(dV/dt)c = 200 V/µs
Tj = 125 °C
Min.
35
A/ms
(dV/dt)c = 10 V/µs
142
1. For either polarity of electrode A2 voltage with reference to electrode A1.



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