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AST1S31HF 数据表(PDF) 22 Page - STMicroelectronics |
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AST1S31HF 数据表(HTML) 22 Page - STMicroelectronics |
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22 / 33 page ![]() Application information AST1S31HF 22/33 DocID026968 Rev 2 7.4 Thermal dissipation The thermal design is important to prevent the thermal shutdown of the device if junction temperature goes above 150 °C. The three different sources of losses within the device are: a) Conduction losses due to the on-resistance of the high-side switch (RHS) and low- side switch (RLS); these are equal to: Equation 33 where D is the duty cycle of the application. Note that the duty cycle is theoretically given by the ratio between VOUT and VIN, but it is actually slightly higher to compensate the losses of the regulator. b) Switching losses due to the high-side power MOSFET turn-on and turn-off; these can be calculated as: Equation 34 where TRISE and TFALL are the overlap times of the voltage across the high-side power switch (VDS) and the current flowing into it during the turn-on and turn-off phases, as shown in Figure 9. TSW is the equivalent switching time. For this device the typical value for the equivalent switching time is 20 ns. c) Quiescent current losses, calculated as: Equation 35 where IQ is the quiescent current (IQ = 1.2 mA maximum). The junction temperature TJ can be calculated as: Equation 36 where TA is the ambient temperature and PTOT is the sum of the power losses just seen. RthJA is the equivalent thermal resistance junction to ambient of the device; it can be calculated as the parallel of many paths of heat conduction from the junction to the ambient. For this device the path through the exposed pad is the one conducting the largest amount of heat. The RthJA measured on the demonstration board (see Figure 12 on page 26) is about 50 °C/W. PCOND RHS IOUT 2 DR LS IOUT 2 1D – + = PSW VIN IOUT TRISE TFALL + 2 ------------------------------------------- Fsw VIN IOUT TSW FSW == PQ VIN IQ = TJ TA RthJA PTOT + = |
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