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ST2S06 数据表(PDF) 7 Page - STMicroelectronics

部件名 ST2S06
功能描述  Synchronous rectification
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST2S06 数据表(HTML) 7 Page - STMicroelectronics

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DocID13866 Rev 6
7/18
ST2S06
Electrical characteristics
18
VIN_SW = VIN_A = 5 V, VO1,2 =1.2 V, C1= 4.7 µF, C2 = C3 = 22 µF, L1 = L2 = 3.3 µH,
TJ = -30 to 125 °C unless otherwise specified. Typical values are referred to 25 °C.
Table 7. Electrical characteristics for the ST2S06B
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
FB1,2
Feedback voltage
784
800
816
mV
IFB1,2
VFB pin bias current
VFB = 1 V
600
nA
IQ
Quiescent current
VINH > 1.2 V, VFB = 1 V
1
mA
VINH < 0.4 V
1
µA
IO1,2
Output current
VIN = 2.5 to 5.5 V
(1)
0.8
A
IMIN
Minimum output current
1
mA
VINH
Inhibit threshold
2.5V < VIN < 5 V
1.2
2.5V < VIN < 5.5 V
1.3
V
Device OFF
0.4
IINH1,2
Inhibit pin current
2
µA
%VO1,2/
V
IN
Reference line regulation
2.5V < VIN < 5.5 V
0.032
%VO/
VIN
V
O1,2
Reference load regulation
10 mA < IO < 0.5 A
5.5
15
mV
PWM fS
PWM switching
frequency(1)
VFB = 0.7 V, TA = 25°C
1.2
1.5
1.8
MHz
DMAX
Maximum duty cycle
VFB = 0.7 V, TA = 25°C
85
94
%
ISWL
Switching current limitation
1
1.2
A
ILKN
NMOS leakage current
VFB = 0.9 V, TA = 25°C
0.1
µA
ILKP
PMOS leakage current
VFB = 0.9 V, TA = 25°C
0.1
µA
RDSon-N
NMOS switch on resistance ISW = 250 mA
0.15
0.3
W
RDSon-P
PMOS switch on resistance ISW = 250 mA
0.2
0.4
W
Efficiency
IO = 20 mA to 100 mA
75
%
IO = 100 mA to 0.5 A
90
%
TSHDN
Thermal shut down (2)
130
150
°C
THYS
Thermal shut down
hysteresis (1)
15
°C
V
O1,2/IO
Load transient response (1)
100 mA < IO < 500 mA,
tR = tF1 => 100 ns, TA = 25°C
-5
+5
%VO
1.
VO= 90% of nominal value.
2.
Guaranteed by design, but not tested in production.



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