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TL082 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
部件名 TL082
功能描述  Wide Bandwidth Dual JFET Input Operational Amplifier
PDF  12 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

TL082 数据表(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
±18V
Power Dissipation
(Note 2)
Operating Temperature Range
0˚C to +70˚C
T
j(MAX)
150˚C
Differential Input Voltage
±30V
Input Voltage Range (Note 3)
±15V
Output Short Circuit Duration
Continuous
Storage Temperature Range
−65˚C to +150˚C
Lead Temp. (Soldering, 10 seconds)
260˚C
ESD rating to be determined.
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage
to the device may occur. Operating Ratings indicate conditions for which the
device is functional, but do not guarantee specific performance limits.
DC Electrical Characteristics (Note 5)
Symbol
Parameter
Conditions
TL082C
Units
Min
Typ
Max
V
OS
Input Offset Voltage
R
S = 10 kΩ,TA = 25˚C
5
15
mV
Over Temperature
20
mV
∆V
OS/∆T
Average TC of Input Offset
R
S = 10 kΩ
10
µV/˚C
Voltage
I
OS
Input Offset Current
T
j = 25˚C, (Notes 5, 6)
25
200
pA
T
j ≤ 70˚C
4
nA
I
B
Input Bias Current
T
j = 25˚C, (Notes 5, 6)
50
400
pA
T
j ≤ 70˚C
8
nA
R
IN
Input Resistance
T
j = 25˚C
10
12
A
VOL
Large Signal Voltage Gain
V
S = ±15V, TA = 25˚C
25
100
V/mV
V
O = ±10V, RL = 2kΩ
Over Temperature
15
V/mV
V
O
Output Voltage Swing
V
S = ±15V, RL = 10 kΩ
±12
±13.5
V
V
CM
Input Common-Mode Voltage
V
S = ±15V
±11
+15
V
Range
−12
V
CMRR
Common-Mode Rejection Ratio
R
S ≤ 10 kΩ
70
100
dB
PSRR
Supply Voltage Rejection Ratio
(Note 7)
70
100
dB
I
S
Supply Current
3.6
5.6
mA
AC Electrical Characteristics (Note 5)
Symbol
Parameter
Conditions
TL082C
Units
Min
Typ
Max
Amplifier to Amplifier Coupling
T
A = 25˚C, f = 1Hz-
−120
dB
20 kHz (Input Referred)
SR
Slew Rate
V
S = ±15V, TA = 25˚C
8
13
V/µs
GBW
Gain Bandwidth Product
V
S = ±15V, TA = 25˚C
4
MHz
e
n
Equivalent Input Noise Voltage
T
A = 25˚C, RS = 100Ω,
25
nV/
Hz
f = 1000 Hz
i
n
Equivalent Input Noise Current
T
j = 25˚C, f = 1000 Hz
0.01
pA/
Hz
Note 2: For operating at elevated temperature, the device must be derated based on a thermal resistance of 115˚C/W junction to ambient for the N package.
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: The power dissipation limit, however, cannot be exceeded.
Note 5: These specifications apply for VS = ±15V and 0˚C ≤TA ≤ +70˚C. VOS,IB and IOS are measured at VCM = 0.
Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj. Due to the limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, PD.Tj = TA + θjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is recom-
mended if input bias current is to be kept to a minimum.
Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice.
VS = ±6V to ±15V.
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