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L6751 数据表(PDF) 49 Page - STMicroelectronics

部件名 L6751
功能描述  Digitally controlled dual PWM for Intel VR12 and AMD SVI
PDF  59 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6751 数据表(HTML) 49 Page - STMicroelectronics

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L6751
System control loop compensation
Doc ID 023992 Rev 1
49/59
Note:
The introduction of a capacitor (CI) in parallel to RFB significantly speeds up the transient
response by coupling the output voltage dV/dt on the FB pin, so using the error amplifier as
a comparator. The COMP pin suddenly reacts and, also thanks to the LTB Technology
control scheme, all the phases can be turned on together to immediately give the required
energy to the output. Typical design considers starting from values in the range of 100 pF,
and validating the effect by bench testing. Additional series resistor (RI) can also be used.
11.2
LTB Technology
LTB Technology further enhances the performance of the controller by reducing the system
latencies and immediately turning on all the phases to provide the correct amount of energy
to the load optimizing the output capacitor count.
LTB Technology monitors the output voltage through a dedicated pin detecting load-
transients with selected dV/dt, it cancels the interleaved phase-shift, turning on
simultaneously all phases.
The LTB detector is able to detect output load transients by coupling the output voltage
through an RLTB - CLTB network. After detecting a load transient, all the phases are turned
on together and the EA latencies also result as bypassed.
Sensitivity of the load transient detector can be programmed in order to control precisely
both the undershoot and the ring-back.
LTB Technology design tips.
Decrease RLTB to increase the system sensitivity making the system sensitive to
smaller dVOUT
Increase CLTB to increase the system sensitivity making the system sensitive to
higher dV/dt
Increase Ri to increase the width of the LTB pulse
Increase Ci to increase the LTB sensitivity over frequency.



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