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LNBH30 数据表(PDF) 21 Page - STMicroelectronics |
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LNBH30 数据表(HTML) 21 Page - STMicroelectronics |
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21 / 27 page ![]() LNBH30 Electrical characteristics DocID023739 Rev 2 21/27 Symbol Parameter Test conditions Min. Typ. Max. Unit IREV Max. reverse current VOUT forced at VOUT_NOM + 0.1 V, after PDO bit is set to 1 (ISINK_TIME-OUT elapsed) 2 mA TSHDN Thermal shutdown threshold 150 °C ΔTSHDN Thermal shutdown hysteresis 15 °C TJ from 0 to 85 °C, VI = 12 V Table 10: I 2C electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit VIL Low level input voltage SDA, SCL 0.8 V VIH High level input voltage SDA, SCL 2 IIN Input current SDA, SCL VIN = 0.4 to 4.5 V -10 10 µA VOL Low level output voltage SDA (open drain), IOL = 6 mA 0.6 V FMAX Maximum clock frequency SCL 400 kHz TJ from 0 to 85 °C, VI = 12 V Table 11: Address pin characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit VADDR-1 “0001000(R/W)” address pin voltage range R/W bit determines the transmission mode: read (R/W=1) write (R/W=0) 0 0.8 V VADDR-2 “0001001(R/W)” address pin voltage range R/W bit determines the transmission mode: read (R/W=1) write (R/W=0) 2 5 V |
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