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STM32F042F6 数据表(PDF) 49 Page - STMicroelectronics |
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STM32F042F6 数据表(HTML) 49 Page - STMicroelectronics |
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49 / 117 page ![]() DocID025832 Rev 5 49/117 STM32F042x4 STM32F042x6 Electrical characteristics 89 6.3.4 Embedded reference voltage The parameters given in Table 25 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions . 6.3.5 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 14: Current consumption measurement scheme . All Run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to CoreMark code. VPVD6 PVD threshold 6 Rising edge 2.66 2.78 2.9 V Falling edge 2.56 2.68 2.8 V VPVD7 PVD threshold 7 Rising edge 2.76 2.88 3 V Falling edge 2.66 2.78 2.9 V VPVDhyst(1) PVD hysteresis - - 100 - mV IDD(PVD) PVD current consumption - - 0.15 0.26(1) µA 1. Guaranteed by design, not tested in production. Table 24. Programmable voltage detector characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Table 25. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.2 1.23 1.25 V tSTART ADC_IN17 buffer startup time -- - 10(1) µs tS_vrefint ADC sampling time when reading the internal reference voltage - 4(1) 1. Guaranteed by design, not tested in production. -- µs ∆VREFINT Internal reference voltage spread over the temperature range VDDA = 3 V - - 10(1) mV TCoeff Temperature coefficient - - 100(1) - 100(1) ppm/°C |
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