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STM32F070RB 数据表(PDF) 39 Page - STMicroelectronics |
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STM32F070RB 数据表(HTML) 39 Page - STMicroelectronics |
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39 / 83 page ![]() DocID027114 Rev 3 39/83 STM32F070CB/RB/C6/F6 Electrical characteristics 69 6.3 Operating conditions 6.3.1 General operating conditions Table 18. Current characteristics Symbol Ratings Max. Unit ΣIVDD Total current into sum of all VDD power lines (source)(1) 120 mA ΣIVSS Total current out of sum of all VSS ground lines (sink)(1) -120 IVDD(PIN) Maximum current into each VDD power pin (source)(1) 100 IVSS(PIN) Maximum current out of each VSS ground pin (sink)(1) -100 IIO(PIN) Output current sunk by any I/O and control pin 25 Output current source by any I/O and control pin -25 ΣIIO(PIN) Total output current sunk by sum of all I/Os and control pins(2) 80 Total output current sourced by sum of all I/Os and control pins(2) -80 IINJ(PIN)(3) Injected current on FT and FTf pins -5/+0(4) Injected current on TC and RST pin ± 5 Injected current on TTa pins(5) ± 5 ΣIINJ(PIN) Total injected current (sum of all I/O and control pins)(6) ± 25 1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the permitted range. 2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be sunk/sourced between two consecutive power supply pins referring to high pin count QFP packages. 3. A positive injection is induced by VIN > VDDIOx while a negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer to Table 17: Voltage characteristics for the maximum allowed input voltage values. 4. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum value. 5. On these I/Os, a positive injection is induced by VIN > VDDA. Negative injection disturbs the analog performance of the device. See note (2) below Table 51: ADC accuracy. 6. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and negative injected currents (instantaneous values). Table 19. Thermal characteristics Symbol Ratings Value Unit TSTG Storage temperature range –65 to +150 °C TJ Maximum junction temperature 150 °C Table 20. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency - 0 48 MHz fPCLK Internal APB clock frequency - 0 48 VDD Standard operating voltage - 2.4 3.6 V |
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