STM32L443CC datasheet(107/207 Pages) STMICROELECTRONICS

107 / 207 page

Table 37. Current consumption in VBAT mode

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

-VBAT

25 °C 55 °C 85 °C

105 °C 125 °C 25 °C

55 °C

85 °C 105 °C 125 °C

IDD(VBAT)

Backup domain

supply current

RTC disabled

1.8 V

193

540

165

482

1350

2.4 V

217

600

182

542

1500

3 V

266

731

12.5

230

665

1928

3.6 V

161

459

1 269

402

1147

3173

RTC enabled and

clocked by LSE

bypassed at 32768 Hz

1.8 V

154

175

247

430

2.4 V

228

246

335

542

3 V

316

340

459

714

3.6 V

419

462

684

1 140

RTC enabled and

clocked by LSE

quartz(2)

1.8 V

256

297

385

558

823

2.4 V

345

381

477

673

906

3 V

455

495

603

836

1 085

3.6 V

591

642

824

1 207

1 733

1. Guaranteed by characterization results, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

STM32L443CC 数据表(PDF) 107 Page - STMicroelectronics

STM32L443CC 数据表(HTML) 107 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载

链接网址

STM32L443CC 数据表(PDF) 107 Page - STMicroelectronics

STM32L443CC 数据表(HTML) 107 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表 下载

链接网址

数据表下载