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STM32L443CC 数据表(PDF) 119 Page - STMicroelectronics |
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STM32L443CC 数据表(HTML) 119 Page - STMicroelectronics |
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119 / 207 page ![]() DocID028739 Rev 2 119/207 STM32L443CC STM32L443RC STM32L443VC Electrical characteristics 177 6.3.8 Internal clock source characteristics The parameters given in Table 46 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 20: General operating conditions. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator Table 46. HSI16 oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz TRIM HSI16 user trimming step Trimming code is not a multiple of 64 0.2 0.3 0.4 % Trimming code is a multiple of 64 -4 -6 -8 DuCy(HSI16)(2) Duty Cycle - 45 - 55 % ∆Temp(HSI16) HSI16 oscillator frequency drift over temperature TA= 0 to 85 °C -1 - 1 % TA= -40 to 125 °C -2 - 1.5 % ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD=1.62 V to 3.6 V -0.1 - 0.05 % tsu(HSI16)(2) HSI16 oscillator start-up time -- 0.8 1.2 μs tstab(HSI16)(2) HSI16 oscillator stabilization time -- 3 5 μs IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA 1. Guaranteed by characterization results. 2. Guaranteed by design. |
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