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FDMS8670AS 数据表(PDF) 15 Page - Texas Instruments |
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FDMS8670AS 数据表(HTML) 15 Page - Texas Instruments |
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15 / 27 page ![]() TRIP TRIP TRIP V (mV) R (k ) I ( A) = W ´ m ( ) f IND ripple IN OUT OUT TRIP TRIP OCP DS(on) DS(on) SW IN I (V V ) V V V 1 I 8 R 2 8 R 2 L V æ ö - ´ ç ÷ = + = + ´ ç ÷ ´ ´ ´ ´ è ø TPS51218 www.ti.com SLUS935B – MAY 2009 – REVISED FEBRUARY 2012 POWER-GOOD The TPS51218 has powergood output that indicates high when switcher output is within the target. The powergood function is activated after soft-start has finished. If the output voltage becomes within +10%/ –5% of the target value, internal comparators detect power-good state and the power-good signal becomes high after a 1-ms internal delay. If the output voltage goes outside of +15%/ –10% of the target value, the powergood signal becomes low after a 2- μs internal delay. The powergood output is an open-drain output and must be pulled up externally. CURRENT SENSE AND OVER CURRENT PROTECTION TPS51218 has cycle-by-cycle overcurrent limiting control. The inductor current is monitored during the OFF state and the controller keeps the OFF state during the inductor current is larger than the overcurrent trip level. To provide both good accuracy and cost effective solution, the TPS51218 supports temperature compensated MOSFET RDS(on) sensing. The TRIP pin should be connected to GND through the trip voltage setting resistor, RTRIP. The TRIP terminal sources ITRIP current, which is 10μA typically at room temperature, and the trip level is set to the OCL trip voltage VTRIP as shown in Equation 4. Note that VTRIP is limited up to approximately 3 V internally. (4) The inductor current is monitored by the voltage between GND pad and SW pin so that the SW pin should be connected to the drain terminal of the low-side MOSFET properly. ITRIP has 4700ppm/°C temperature slope to compensate the temperature dependency of the RDS(on). GND is used as the positive current sensing node so that GND should be connected to the proper current sensing device, i.e. the source terminal of the low-side MOSFET. As the comparison is done during the OFF state, VTRIP sets valley level of the inductor current. Thus, the load current at overcurrent threshold, IOCP, can be calculated in Equation 5 (5) In an overcurrent condition, the current to the load exceeds the current to the output capacitor thus the output voltage tends to fall down. Eventually, it crosses the undervoltage protection threshold and shuts down the controller. When the device is operating in the forced continuous conduction mode, the negative current limit (NCL) protects the external FET from carrying too much current. The NCL detect threshold is set as the same absolute value as positive OCL but negative polarity. Please be noted the threshold still represents the valley value of the inductor current. OVER/UNDER VOLTAGE PROTECTION TPS51218 monitors a resistor divided feedback voltage to detect over and undervoltage. When the feedback voltage becomes higher than 120% of the target voltage, the OVP comparator output goes high and the circuit latches as the high-side MOSFET driver OFF and the low-side MOSFET driver ON. When the feedback voltage becomes lower than 70% of the target voltage, the UVP comparator output goes high and an internal UVP delay counter begins counting. After a 1-ms delay, TPS51218 latches OFF both high-side and low-side MOSFETs drivers. This function is enabled after 1.2 ms following EN has become high. UVLO PROTECTION TPS51218 has V5IN undervoltage lockout protection (UVLO). When the V5IN voltage is lower than UVLO threshold voltage, the switch mode power supply shuts off. This is non-latch protection. THERMAL SHUTDOWN TPS51218 monitors the die temperature. If the temperature exceeds the threshold value (typically 145 °C), the TPS51218 is shut off. This is non-latch protection. Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 15 Product Folder Link(s): TPS51218 |
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