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BTW67 数据表(PDF) 1 Page - STMicroelectronics

部件名 BTW67
功能描述  50A SCRs
PDF  5 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BTW67 数据表(HTML) 1 Page - STMicroelectronics

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BTW67 and BTW69 Series
STANDARD
50A SCRs
April 2001 - Ed: 4
MAIN FEATURES:
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V RMS), complying
with UL standards (file ref: E81734).
Symbol
Value
Unit
IT(RMS)
50
A
VDRM/VRRM
600to1200
V
IGT
80
mA
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(180° conduction angle)
RD91
Tc = 70°C
50
A
TOP3 Ins.
Tc = 75°C
IT(AV)
Average on-state current
(180° conduction angle)
RD91
Tc = 70°C
32
A
TOP3 Ins.
Tc = 75°C
ITSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25°C
610
A
tp = 10 ms
580
I
²tI²t Value for fusing
Tj = 25°C
1680
A2S
dI/dt
Critical rate of rise of on-state current IG =
2x IGT ,tr ≤ 100 ns
F = 60 Hz
Tj = 125°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
8
A
PG(AV)
Average gate power dissipation
Tj = 125°C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
-40to+ 150
-40to+ 125
°C
VRGM
Maximum peak reverse gate voltage
5
V
RD91
(BTW67)
TOP3
(BTW69)


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