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TP5089 数据表(PDF) 2 Page - National Semiconductor (TI) |
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TP5089 数据表(HTML) 2 Page - National Semiconductor (TI) |
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2 / 6 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage (VDD b VSS) 15V Maximum Voltage at Any Pin VDD a 03V to VSS b 03V Operating Temperature b 30 Cto a60 C Storage Temperature b 55 Cto a 150 C Maximum Power Dissipation 500 mW Electrical Characteristics Unless otherwise noted limits printed in BOLD characters are guaranteed for VDD e 35V to 10V TA e 0 Cto a60 C by correlation with 100% electrical testing at TA e 25 C All other limits are assured by correlation with other production tests andor product design and characterization Parameter Conditions Min Typ Max Units Minimum Supply Voltage for Keysense 2V and MUTE Logic Functions Minimum Operating Voltage 35 V for generating tones Operating Current Mute open 2 25 m A Idle RL e % 11 25 mA Generating Tones VDD e 35V Input Resistors COLUMN and ROW (Pull-Up) 25 50 kX SINGLE TONE INHIBIT (Pull-Down) 120 kX TONE DISABLE (Pull-Up) Input Low Level 02 VDD V Input High Level 08 VDD V MUTE OUT Sink Current VDD e 35V 04 mA (COLUMN and ROW Active) Vo e 05V MUTE Out Leakage Current Vo e VDD 1 m A Output Amplitude RL e 240 X 190 250 340 mVrms Low Group VDD e 35V RL e 240X 510 700 880 mVrms VDD e 10V Output Amplitude RL e 240X 270 340 470 mVrms High Group VDD e 35V RL e 240X 735 955 1265 mVrms VDD e 10V Mean Output DC Offset VDD e 35V 13 V VDD e 10V 46 V High Group Pre-Emphasis 22 27 32 dB Dual ToneTotal Harmonic Distortion Ratio VDD e 4V RL e 240X b 23 b 22 dB 1 MHz Bandwidth Start-Up Time (to 90% Amplitude) 3 5 mS Note 1 RL is the external load resistor connected from TONE OUT to VSS Note 2 Crystal specification Parallel resonant 3579545 MHz RS s 150 X L e 100 mH CO e 5 pF CI e 002 pF 2 |
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