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TP5089 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 TP5089
功能描述  TP5089 DTMF (TOUCH-TONE) Generator
PDF  6 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

TP5089 数据表(HTML) 2 Page - National Semiconductor (TI)

  TP5089 Datasheet HTML 1Page - National Semiconductor (TI) TP5089 Datasheet HTML 2Page - National Semiconductor (TI) TP5089 Datasheet HTML 3Page - National Semiconductor (TI) TP5089 Datasheet HTML 4Page - National Semiconductor (TI) TP5089 Datasheet HTML 5Page - National Semiconductor (TI) TP5089 Datasheet HTML 6Page - National Semiconductor (TI)  
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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage (VDD b VSS)
15V
Maximum Voltage at Any Pin
VDD a 03V to VSS b 03V
Operating Temperature
b
30 Cto a60 C
Storage Temperature
b
55 Cto a 150 C
Maximum Power Dissipation
500 mW
Electrical Characteristics Unless otherwise noted limits printed in BOLD characters are guaranteed for VDD e
35V to 10V TA e 0 Cto a60 C by correlation with 100% electrical testing at TA e 25 C All other limits are assured by
correlation with other production tests andor product design and characterization
Parameter
Conditions
Min
Typ
Max
Units
Minimum Supply Voltage for Keysense
2V
and MUTE Logic Functions
Minimum Operating Voltage
35
V
for generating tones
Operating Current
Mute open
2
25
m
A
Idle
RL e %
11
25
mA
Generating Tones
VDD e 35V
Input Resistors
COLUMN and ROW (Pull-Up)
25
50
kX
SINGLE TONE INHIBIT (Pull-Down)
120
kX
TONE DISABLE (Pull-Up)
Input Low Level
02 VDD
V
Input High Level
08 VDD
V
MUTE OUT Sink Current
VDD e 35V
04
mA
(COLUMN and ROW Active)
Vo e 05V
MUTE Out Leakage Current
Vo e VDD
1
m
A
Output Amplitude
RL e 240 X
190
250
340
mVrms
Low Group
VDD e 35V
RL e 240X
510
700
880
mVrms
VDD e 10V
Output Amplitude
RL e 240X
270
340
470
mVrms
High Group
VDD e 35V
RL e 240X
735
955
1265
mVrms
VDD e 10V
Mean Output DC Offset
VDD e 35V
13
V
VDD e 10V
46
V
High Group Pre-Emphasis
22
27
32
dB
Dual ToneTotal Harmonic Distortion Ratio
VDD e 4V RL e 240X
b
23
b
22
dB
1 MHz Bandwidth
Start-Up Time (to 90% Amplitude)
3
5
mS
Note 1
RL is the external load resistor connected from TONE OUT to VSS
Note 2
Crystal specification Parallel resonant 3579545 MHz RS s 150 X L e 100 mH CO e 5 pF CI e 002 pF
2



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