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DFE252012C 数据表(PDF) 4 Page - MagnaChip Semiconductor. |
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DFE252012C 数据表(HTML) 4 Page - MagnaChip Semiconductor. |
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4 / 17 page ![]() Confidential Datasheet Version 1.1 Mar. 2015. Revision 1.1 MagnaChip Semiconductor Ltd. 4 AGND D2 Analog ground REG D3, E2 Boost converter output pin OUTP E3 Output pin of the LDO (VPOS) Absolute Maximum Ratings Absolute Maximum Ratings (Note ) Parameter Value Unit CFLY1,OUTP, REG, SCL, SDA, VIN -0.3 to 6.0 V ENP, ENN -0.3 to VIN + 0.3V V SW -0.3V to VOUTP+0.3 V CFLY2, OUTN -6.0 to 0.3 V Operating ambient temperature range, TA -40 to +85 ℃ Ambient Storage Temperature (Ts) -65 to +150 ℃ Junction Thermal Resistance (θJA) (Note) 76.5 ℃/W ESD HBM Rating 2 kV ESD MM Rating 200 V Note: Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Recommended Operating Conditions Parameter Value Unit Input Voltage Range 2.8 to 5.5 V Inductor 2.2 to 4.7 uH Input Capacitor 4.7 to 10 uF Flying Capacitor 2.2 to 4.7 uF Output Capacitor 4.7 to 10 uF Operating ambient temperature -40 to +85 ℃ Operating junction temperature -40 to +125 ℃ |
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