MDF9N50 datasheet(2/6 Pages) MGCHIP

2 / 6 page

Dec.2009. Version 1.2

MagnaChip Semiconductor Ltd

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDF9N50TH

-55~150

TO-220F

Tube

Halogen Free

Electrical Characteristics (Ta =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

500

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250µA

3.0

5.0

Drain Cut-Off Current

IDSS

VDS = 500V, VGS = 0V

µA

Gate Leakage Current

IGSS

VGS = ±30V, VDS = 0V

100

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 4.5A

0.72

0.85

Forward Transconductance

gfs

VDS = 30V, ID = 4.5A

Dynamic Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

5.7

Gate-Drain Charge

Qgd

VDS = 400V, ID = 9.0A, VGS = 10V

(3)

7.6

Input Capacitance

Ciss

780

Reverse Transfer Capacitance

Crss

4.0

Output Capacitance

Coss

VDS = 25V, VGS = 0V, f = 1.0MHz

100

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

VGS = 10V, VDS = 250V, ID = 9.0A,

RG = 25

(3)

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to

Source Diode Forward Current

9.0

Source-Drain Diode Forward

Voltage

VSD

IS = 9.0A, VGS = 0V

1.4

Body Diode Reverse Recovery

Time

trr

272

Body Diode Reverse Recovery

Charge

Qrr

IF = 9.0A, dl/dt = 100A/µs

(3)

2.0

µC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25 , Starting TJ=25°C

4. L=5.1mH,

IAS=9.0A, VDD=50V, Rg =25 , Starting TJ=25°C

MDF9N50 数据表(PDF) 2 Page - MagnaChip Semiconductor.

MDF9N50 数据表(HTML) 2 Page - MagnaChip Semiconductor.

Html Pages

1 2 3 4 5 6

数据表下载