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IXTH16P20 数据表(PDF) 1 Page - IXYS Corporation |
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IXTH16P20 数据表(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() © 2002 IXYS All rights reserved TO-247 AD G = Gate, D = Drain, S = Source, TAB = Drain D (TAB) Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C -200 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ -200 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25 °C -16 A I DM T C = 25 °C, pulse width limited by T J -64 A I AR T C = 25 °C -16 A E AR T C = 25 °C30 mJ P D T C = 25 °C 180 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s M d Mounting torque 1.13/10 Nm/lb.in. Weight 6g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = -250 µA -200 V V GS(th) V DS = VGS, ID = -250 µA -3.0 -5.0 V I GSS V GS = ±20 VDC, VDS = 0 ±100 nA I DSS V DS = 0.8 V DSS T J = 25 °C -25 µA V GS = 0 V T J = 125 ° C-1 mA R DS(on) V GS = -10 V, ID = 0.5 I D25 0.22 Ω Features • Internationalstandardpackage JEDEC TO-247 AD • Low R DS (on) HDMOS TM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance (<5 nH) - easy to drive and to protect Applications • High side switching • Push-pull amplifiers • DC choppers • Automatic test equipment Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density 98906 (2/02) P-Channel Enhancement Mode Avalanche Rated Standard Power MOSFET IXTH 16P20 Advance Technical Information V DSS = -200 V I D25 = -16 A R DS(on) = 0.22 Ω Ω Ω Ω Ω |
类似零件编号 - IXTH16P20 |
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类似说明 - IXTH16P20 |
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