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M93C86-R 数据表(PDF) 22 Page - STMicroelectronics

部件名 M93C86-R
功能描述  Programming instructions that work on: byte word or entire memory
PDF  35 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M93C86-R 数据表(HTML) 22 Page - STMicroelectronics

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DC and AC parameters
M93C86-x M93C76-x M93C66-x M93C56-x M93C46-x
22/35
DocID4997 Rev 17
Table 15. DC characteristics (M93Cx6-R)
Symbol
Parameter
Test condition
Min.
Max.
Unit
ILI
Input leakage current
0V
≤ VIN ≤ VCC
-
±2.5
µA
ILO
Output leakage current
0V
≤ VOUT ≤ VCC, Q in Hi-Z
-
±2.5
µA
ICC
Operating supply current
VCC = 5 V, S = VIH, f = 2 MHz,
Q = open
-
2
mA
VCC = 1.8 V, S = VIH, f = 1 MHz,
Q = open
-
1
mA
ICC1
Standby supply current
VCC = 1.8 V, S = VSS, C = VSS,
ORG = VSS or VCC,
pin7 = VCC, VSS or Hi-Z
-
1(1)
µA
VIL
Input low voltage (D, C, S)
-
–0.45
0.2 VCC
V
VIH
Input high voltage (D, C, S)
-
0.8 VCC VCC + 1
V
VOL
Output low voltage (Q)
VCC = 1.8 V, IOL = 100 µA
-
0.2
V
VOH
Output high voltage (Q)
VCC = 1.8 V, IOH = –100 µA
VCC–0.2
-
V
1.
2 µA for previous devices identified with process letter G.
Table 16. AC characteristics (M93Cx6-W, M93Cx6-R(1), device grade 6)
1.
All M93Cx6-R devices operate with a clock frequency of 1MHz, as defined in Table 17. Only the new
M93Cx6-R devices (identified with the process letter K) can operate with the 2 MHz timing values defined
in this table.
Test conditions specified in Table 8 and Table 12
Symbol
Alt.
Parameter
Min.
Max.
Unit
fC
fSK
Clock frequency
D.C.
2
MHz
tSLCH
Chip Select low to Clock high
50
-
ns
tSHCH
tCSS
Chip Select setup time
50
-
ns
tSLSH
(2)
2.
Chip Select Input (S) must be brought low for a minimum of tSLSH between consecutive instruction cycles.
tCS
Chip Select low to Chip Select high
200
-
ns
tCHCL
(3)
3.
tCHCL + tCLCH ≥ 1 / fC.
tSKH
Clock high time
200
-
ns
tCLCH
(3)
tSKL
Clock low time
200
-
ns
tDVCH
tDIS
Data in setup time
50
-
ns
tCHDX
tDIH
Data in hold time
50
-
ns
tCLSH
tSKS
Clock setup time (relative to S)
50
-
ns
tCLSL
tCSH
Chip Select hold time
0
-
ns
tSHQV
tSV
Chip Select to READY/BUSY status
-
200
ns
tSLQZ
tDF
Chip Select low to output Hi-Z
-
100
ns
tCHQL
tPD0
Delay to output low
-
200
ns
tCHQV
tPD1
Delay to output valid
-
200
ns
tW
tWP
Erase or Write cycle time
-
5
ms



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