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AS6C1016 数据表(PDF) 9 Page - Alliance Semiconductor Corporation |
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AS6C1016 数据表(HTML) 9 Page - Alliance Semiconductor Corporation |
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9 / 13 page ![]() AS6C1016 64K X 16 BIT LOW POWER CMOS SRAM Alliance Memory, Inc. Rev. 1.4 8 DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCC for Data Retention VDR CE# ≧ VCC - 0.2V 1.5 - 5.5 V Data Retention Current IDR VCC = 1.5V CE# ≧ VCC - 0.2V Others at 0.2V or VCC-0.2V LL/LLI - 0.5 20 µA Chip Disable to Data Retention Time tCDR See Data Retention Waveforms (below) 0 - - ns Recovery Time tR tRC* - - ns tRC* = Read Cycle Time DATA RETENTION WAVEFORM Low Vcc Data Retention Waveform (1) (CE# controlled) Vcc CE# VDR ¡Ù 1.5V CE# ¡Ù Vcc-0.2V Vcc(min.) VIH tR tCDR VIH Vcc(min.) Low Vcc Data Retention Waveform (2) (LB#, UB# controlled) Vcc LB#,UB# VDR ¡Ù 1.5V LB#,UB# ¡Ù Vcc-0.2V Vcc(min.) VIH tR tCDR VIH Vcc(min.) |
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