AS6C1608 datasheet(9/13 Pages) ALSC

9 / 13 page

AS6C1608

Rev. 1.1

2048K X 8 BIT LOW POWER CMOS SRAM

Alliance Memory Inc.reserves the rights to change the specifications and products without notice.

Alliance Memory, Inc.

551 Taylor Way, Suite #1, San Carlos, CA 94070, USA

Tel: +1 650 610 6800 Fax: +1 650 620 9211

DATA RETENTION CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

VCC for Data Retention

VDR

CE#

≧ VCC - 0.2V or CE2≦0.2V

1.2

3.6

Data Retention Current

IDR

VCC = 1.2V

CE#

≧VCC-0.2V or CE2≦0.2V

Other pins at 0.2V or VCC-0.2V

SLI

25℃

2.5

µA

40℃

2.5

µA

2.5

µA

SLI

2.5

µA

Chip Disable to Data

Retention Time

tCDR

See Data Retention

Waveforms (below)

Recovery Time

tRC*

tRC* = Read Cycle Time

DATA RETENTION WAVEFORM

Low Vcc Data Retention Waveform (1) (CE# controlled)

Vcc

CE#

VDR ¡Ù 1.2V

CE# ¡Ù Vcc-0.2V

Vcc(min.)

VIH

tCDR

VIH

Vcc(min.)

Low Vcc Data Retention Waveform (2) (CE2 controlled)

Vcc

CE2

VDR ¡Ù 1.2V

CE2 ¡Ø 0.2V

Vcc(min.)

VIL

tCDR

VIL

Vcc(min.)

AS6C1608 数据表(PDF) 9 Page - Alliance Semiconductor Corporation

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