MDU1721 datasheet(2/6 Pages) MGCHIP

2 / 6 page

May. 2013.

Rev. 1.0

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDU1721VRH

-55~150

PDFN56

Tape & Reel

Halogen Free

Electrical Characteristics (TJ =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

1.0

3.0

Drain Cut-Off Current

IDSS

VDS = 40V, VGS = 0V

1.0

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID =50A

1.1

1.4

Ω

Forward Transconductance

gfs

VDS = 10V, ID =50A

120

Dynamic Characteristics

Total Gate Charge

Qg(10.0V)

VDS = 20.0V, ID = 50.0A,

VGS = 10V

113.8

Gate-Source Charge

Qgs

23.3

Gate-Drain Charge

Qgd

18.6

Input Capacitance

Ciss

VDS = 20.0V, VGS = 0V,

f = 1.0MHz

7,450

Reverse Transfer Capacitance

Crss

200

Output Capacitance

Coss

1.850

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 20.0V,

ID = 50A , RG = 3.0Ω

24.0

Rise Time

16.1

Turn-Off Delay Time

td(off)

92.3

Fall Time

30.0

Gate Resistance

f=1 MHz

1.3

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 50A, VGS = 0V

0.80

1.2

Body Diode Reverse Recovery Time

trr

IF =50A, dl/dt = 100A/μs

61.0

Body Diode Reverse Recovery Charge

Qrr

92.0

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited

2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 30.0A, VGS = 10V.

3. T < 10sec.

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