MMDFS3P303

http://onsemi.com

2

Peak Repetitive Reverse Voltage

DC Blocking Voltage

VRRM

VR

30

Volts

Average Forward Current (Note 3.)

(Rated VR) TA = 100°C

IO

3.0

Amps

Peak Repetitive Forward Current (Note 3.)

(Rated VR, Square Wave, 20 kHz) TA = 105°C

Ifrm

6.0

Amps

Non–Repetitive Peak Surge Current

(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)

Ifsm

30

Amps

THERMAL CHARACTERISTICS – SCHOTTKY AND MOSFET

Thermal Resistance – Junction–to–Ambient (Note 4.) – MOSFET

RqJA

201

°C/W

Thermal Resistance – Junction–to–Ambient (Note 5.) – MOSFET

RqJA

105

Thermal Resistance – Junction–to–Ambient (Note 3.) – MOSFET

RqJA

62.5

Thermal Resistance – Junction–to–Ambient (Note 4.) – Schottky

RqJA

197

Thermal Resistance – Junction–to–Ambient (Note 5.) – Schottky

RqJA

97

Thermal Resistance – Junction–to–Ambient (Note 3.) – Schottky

RqJA

62.5

Operating and Storage Temperature Range

Tj, Tstg

–55 to 150

°C

3. Mounted on 2

″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.

4. Mounted with minimum recommended pad size, PC Board FR4.

5. Mounted on 2

″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State.

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Voltage

(VGS = 0 Vdc, ID = 0.25 mA)

Temperature Coefficient (Positive)

V(BR)DSS

30

–

–

27

–

–

Vdc

mV/

°C

Zero Gate Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

–

–

–

–

1.0

10

µAdc

Gate Body Leakage Current

(VGS = ± 20 Vdc, VDS = 0)

IGSS

–

–

100

nAdc

ON CHARACTERISTICS (Note 6.)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mA)

Temperature Coefficient (Negative)

VGS(th)

1.0

–

1.7

3.5

–

–

Vdc

mV/

°C

Static Drain–Source Resistance (VGS = 10 Vdc, ID = 3.5 Adc)

(VGS = 4.5 Vdc, ID = 2.0 Adc)

RDS(on)

–

–

0.085

0.130

0.100

0.160

W

Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)

gFS

–

5.0

–

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vd

V

0 Vd

Ciss

–

405

–

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

–

200

–

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

–

55

–

SWITCHING CHARACTERISTICS (Note 7.)

Turn–On Delay Time

td(on)

–

12.5

25

ns

Rise Time

(VDD = 20 Vdc, ID = 2.0 Adc,

VGS =10Vdc

tr

–

16

30

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

–

50

90

Fall Time

RG 6.0 Ω)

tf

–

35

65

1. Negative signs for P–Channel device omitted for clarity.

6. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

7. Switching characteristics are independent of operating junction temperature.