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BZW06 数据表(PDF) 4 Page - STMicroelectronics |
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BZW06 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics BZW06 4/9 DocID2972 Rev 4 1.1 Characteristics (curves) Figure 2: Pulse waveform (10/1000 μs) Figure 3: Peak pulse power dissipation versus initial junction temperature Figure 4: Peak pulse power versus exponential pulse duration Figure 5: Clamping voltage versus peak pulse current (maximum values). Figure 6: Junction capacitance versus reverse applied voltage (unidirectional types) 100 50 0 % Ipp t 1000 µs Pulse waveform 10/1000 µs 10 µs 0 100 200 300 400 500 600 700 0 25 50 75 100 125 150 175 200 Tj(°C) 10/1000 µs PPP(W) 0.1 1.0 10.0 100.0 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 tP(ms) T j initial = 25 °C PPP(kW) 0.1 1.0 10.0 100.0 1000.0 1 10 100 1000 VCL(V) 10/1000 µs T j initial = 25 °C 8/20 µs 10 ms IPP(A) 10 100 1000 10000 1 10 100 1000 VR(V) C(pF) F = 1 MHz V osc = 30 mVRMS T j = 25 °C BZW06-5V8 BZW06-13 BZW06-58 BZW06-171 |
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