DSL05

Characteristics

DocID029116 Rev 2

3/10

1.1

Characteristics (curves)

Figure 3: Peak pulse power dissipation versus

initial junction temperature (maximum values)

Figure 4: Leakage current versus junction

temperature

Figure 5: Junction capacitance versus reverse

voltage

Figure 6: Junction capacitance versus junction

temperature

0

10

20

30

40

50

0

25

50

75

100

125

150

175

IPP (A)

Tj(°C)

8/20 µs

0.01

0.1

1

10

100

1000

10000

0

25

50

75

100

125

150

Tj(°C)

DSL05 -024 SC6

IR(nA)

0

0.5

1

1.5

2

2.5

3

0

2

4

6

8

10

12

14

16

18

20

22

24

VR(V)

Tj = 25 °C

Vosc = 1 V

VR < V RM

I/O to I/O

C(pF)

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

0

25

50

75

100

125

150

C(pF)

Tj(°C)

Vosc = 1 V

VR= 2 V

I/O to I/O