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MSI2021 数据表(PDF) 3 Page - MagnaChip Semiconductor. |
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MSI2021 数据表(HTML) 3 Page - MagnaChip Semiconductor. |
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3 / 11 page ![]() June. 2009. Revision 1.3 MagnaChip Semiconductor Ltd. 3 Absolute Maximum Ratings Symbol Parameter Min Max Unit VDD DC Supply Voltage on VDD pin -0.5 5.5 V VSAB Control Input Voltage (SA, SB) -0.5 VDD+0.3V V VIN/OUT In/Out Voltage in Analog IO pins A0, A1, B0, B1 VDD-4.3 VDD+0.3 V IIN/OUT In/Out Current in Analog IO pins 350 mA IIN/OUT_PEAK Peak Current in Analog IO pins (1ms Duration @10% Duty Cycle) 500 mA ESD HBM on All Pins 8 kV TS Storage Temperature -65 150 ° C Note 1: Stresses beyond the above listed maximum ratings may damage the device permanently. Operating above the recommended conditions for extended time may stress the device and affect device reliability. Also the device may not operate normally above the recommended operating conditions. These are stress ratings only. Recommended Operating Conditions Symbol Parameter Min Max Unit VDD Supply Voltage 1.65 4.3 V VSAB Control Input Voltage (SA, SB) 0 VDD V VIN/OUT In/Out Voltage in Analog IO Voltage VDD-4.3 VDD V TA Operating Temperature -40 85 °C DC Electrical Characteristics All listed typical values are tested at TA=25°C unless otherwise specified. Symbol Parameter Test Conditions VDD(V) Min Typ Max Unit VSAB_H Control Input High Voltage 1.65 ≤ VDD < 2.3V 1.65 0.9 V 2.3 ≤ VDD < 2.8V 2.6 1.4 2.8 ≤ VDD < 3.7V 3.3 1.5 VDD = 4.3V 4.3 1.7 VSAB_L Control Input Low Voltage 1.65 ≤ VDD < 2.8V 1.65 0.4 V 2.8 ≤ VDD < 3.7V 3.3 0.5 VDD=4.3V 4.3 0.6 ISAB Control Input Leakage Current VSAB = 0 and VDD 4.3 -1 1 μA ICC Quiescent Supply Current VDD=4.3V, VSAB=0 or VDD, IIN/OUT=0A 4.3 1.0 μA ICCT Increase in ICC on VDD pin per Control Voltage VSAB=2.6V 4.3 4 10.0 μA VSAB=1.8V 4.3 12 30 ILEAK_OFF OFF State Leakage Current on A* & B* (See Figure 1) 0.3 < VIN/OUT ≤ VDD – 0.3 4.3 -2 2 μA ILEAK_ON ON State Leakage Current on COMA & COMB (See Figure 1) 0.3 < VIN/OUT ≤ VDD – 0.3 4.3 -2 2 μA IOFF Power OFF Leakage Current on COMA & COMB (See Figure 1) VIN/OUT = 4.3V 0 ± 45 μA RON On-Resistance (See Figure 2) VIN/OUT = VDD-4.3V, 0.7 and VDD, IIN/OUT = 100mA 1.65 1.0 Ω 3.0 0.4 4.3 0.3 ᅀ RON On-Resistance Match Between Channels (Note 1) VIN/OUT = 0.7V, IIN/OUT = 100mA 1.65 1.0 Ω 3.0 0.06 4.3 0.04 RFLAT_ON RON Flatness (Note 2) VIN/OUT = VDD-4.3V, and 0.7V, IIN/OUT = 100mA 1.65 0.6 Ω 3.0 0.3 4.3 0.2 Note 1: ᅀ RON(MAX) = | RON_MAX(A0, A1, B0, or B1)-RON_MIN(A0, A1, B0, or B1) | @ Same TA, input voltage, and Supply voltage. Note 2: RFLAT_ON is defined as the difference between the maximum and minimum value of RON measured over specified VIN/OUT range. |
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