ESDALCL6-2SC6 datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

ESDALCL6-2SC6

Characteristics

Doc ID 023868 Rev 1

3/7

Figure 2.

Capacitance versus voltage

(typical values)

Figure 3.

Line capacitance versus frequency

(typical values)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

C(pF)

F=1MHz

=30mV

T =25°C

OSC

RMS

C =I/O-I/O

C =I/O-GND

Data line voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

100

1000

C(pF)

=30mV

T =25°C

OSC

RMS

=0V to 3.3V

LINE

F(MHz)

Figure 4.

Leakage current versus junction

temperature (typical values,

VR =1V)

Figure 5.

Leakage current versus reverse

applied voltage (typical values)

100

1000

10000

100

120

140

IR(pA)

T (°C)

200

400

600

800

1000

1200

1400

1600

1800

2000

123

456

IR(pA)

(V)

Figure 6.

ESD response to IEC 61000-4-2

(+8 kV contact discharge)

Figure 7.

ESD response to IEC 6100-4-2

(-8 kV contact discharge)

20 V/div

138 V

23 V

19 V

V : ESD peak voltage

V :clamping voltage at 30 ns

V :clamping voltage at 60 ns

V :clamping voltage at 100 ns

20 ns/div

20 V/div

-5 V

-2 V

20 ns/div

V : ESD peak voltage

V :clamping voltage at 30 ns

V :clamping voltage at 60 ns

V :clamping voltage at 100 ns

-81 V

-5 V

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