EMI2121MTTAG datasheet(2/9 Pages) ONSEMI

2 / 9 page

EMI2121, SZEMI2121

http://onsemi.com

PIN DESCRIPTION

Pin No.

Pin Name

Type

Description

In_1+

I/O

CMF Channel 1+ to Connector (External)

In_1−

I/O

CMF Channel 1− to Connector (External)

Out_1+

I/O

CMF Channel 1+ to ASIC (Internal)

Out_1−

I/O

CMF Channel 1− to ASIC (Internal)

VDD/ID

I/O

Supply Protection to Connector (External)

3,4,5

GND

Ground

MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

Parameter

Symbol

Value

Units

Operating Temperature Range

TOP

−40 to +85

°C

Storage Temperature Range

TSTG

−65 to +150

°C

Maximum Lead Temperature for Soldering Purposes (1/8” from Case for 10 Seconds)

260

°C

DC Current per Line

ILINE

100

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Channel Leakage Current

ILEAK

TA = 25°C, VIN = 5 V, GND = 0 V

1.0

Channel Negative Voltage

TA = 25°C, IF = 10 mA

0.1

1.5

Channel Input Capacitance to ground

(Pins 1,2,4,5 to Pins 3,8)

CIN

TA = 25°C, At 1 MHz, GND = 0 V,

VIN = 1.65 V

0.8

1.3

Channel Resistance (Pins 1−16, 2−15, 4−13,

5−12, 7−10 and 9−9)

Rch

8.0

Differential Mode Cut*Off Frequency

f3dB

50 W source and load termination

2.0

GHz

Common Mode Stop Band Attenuation

Fatten

@ 800 MHz

In−system ESD Withstand Voltage

a) Contact discharge per IEC 61000−4−2

standard, Level 4 (External Pins)

b) Contact discharge per IEC 61000−4−2

standard, Level 1 (Internal Pins)

VESD

(Notes 1 and 2)

±12

±2

TLP Clamping Voltage (See Figure 9)

VCL

Forward IPP = 8 A

Forward IPP = 12 A

Reverse IPP = −8 A

Reverse IPP = −12 A

−6

−8.5

Reverse Working Voltage

VRWM

(Note 3)

5.0

Breakdown Voltage

VBR

IT = 1 mA; (Note 4)

5.5

9.0

Maximum Peak Pulse Current (Pin 6 to GND)

IPP

8x20 ms Waveform

Clamping Voltage (Pin 6 to GND)

IPP = 5 A

Dynamic Resistance

Positive Transients

Negative Transients

RDYN

TA = 25C, IPP=1 A, tP= 8/20 us,

Any I/O to GND

0.67

0.59

1. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330, GND grounded.

2. These measurements performed with no external capacitor.

3. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC

or continuous peak operating voltage level.

4. VBR is measured at pulse test current IT.

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