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AM29F010B 数据表(PDF) 29 Page - SPANSION |
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AM29F010B 数据表(HTML) 29 Page - SPANSION |
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29 / 35 page ![]() 28 Am29F010B November 18, 2002 AC CHARACTERISTICS ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 5.0 V V CC, 1 million cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 4.5 V (4.75 V for -45), 100,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set DQ5 = 1. See the section on DQ5 for further information. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4 for further information on command definitions. 6. The device has a minimum guaranteed erase cycle endurance of 1 million cycles. tGHEL tWS OE# CE# WE# tDS Data tAH Addresses tDH tCP DQ7# DOUT tWC tAS tCPH PA Data# Polling A0 for program 55 for erase tWHWH1 or 2 tWH PD for program 30 for sector erase 10 for chip erase 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Notes: 1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, DOUT = Array Data. 2. Figure indicates the last two bus cycles of the command sequence. Figure 13. Alternate CE# Controlled Write Operation Timings Parameter Limits Comments Typ (Note 1) Max (Note 2) Unit Chip/Sector Erase Time 1.0 15 sec Excludes 00h programming prior to erasure (Note 4) Byte Programming Time 7 300 µs Excludes system-level overhead (Note 5) Chip Programming Time (Note 3) 0.9 6.25 sec |
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