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TLP751 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TLP751 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 7 page ![]() TLP751 2002-09-25 2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current (Note 1) IF 25 mA Pulse forward current (Note 2) IFP 50 mA Peak transient forward current (Note 3) IFPT 1 A Reverse voltage VR 5 V Diode power dissipation (Note 4) PD 45 mW Output current IO 8 mA Peak output current IOP 16 mA Output voltage VO -0.5~15 V Supply voltage VCC -0.5~15 V Base current IB 5 mA Output power dissipation (Note 5) PO 100 mW Emitter -base reverse voltage VEB 5 V Operating temperature range Topr -55~100 °C Storage temperature range Tstg -55~125 °C Lead solder temperature(10s) (Note 6) Tsol 260 °C Isolation voltage (AC,1min.,R.H.≤ 60%) (Note 7) BVS 5000 Vrms (Note 1) Derate 0.8mA above 70°C (Note 2) 50% duty cycle,1ms pulse width. Derate 1.6mA / °C above 70°C (Note 3) Pulse width ≤ 1µs,300pps. (Note 4) Derate 0.9mW / °C above 70°C (Note 5) Derate 2mW / °C above 70°C (Note 6) Soldering portion of lead : up to 2mm from the body of the device. (Note 7) Device considered a two terminal device: Pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together. |
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