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2SC5819 数据表(PDF) 3 Page - Toshiba Semiconductor |
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2SC5819 数据表(HTML) 3 Page - Toshiba Semiconductor |
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3 / 5 page ![]() 2SC5819 2001-12-17 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) VCE (sat) – IC Collector current IC (A) VBE (sat) – IC Base-emitter voltage VBE (V) IC – VBE 0 001 1 0.1 0.01 0 001 0.01 0.1 1 10 Common emitter IC/ B = 50 Single nonrepetitive pulse 25 -55 Ta = 100°C 0 001 0.01 0.1 1 10 10 0.1 1 Common emitter IC/IB = 50 Single nonrepetitive pulse 25 -55 Ta = 100°C 0 0 0.2 0.4 0.6 0.8 0 5 1 1 5 IB = 2 mA Common emitter Ta = 25°C Single nonrepetitive pulse 4 6 8 10 20 15 0 0 0 3 0.3 0.6 0.9 1.5 0 6 0 9 1 2 1 5 Common emitter VCE = 2 V Single nonrepetitive pulse Ta = 100°C -55 25 1.2 Collector current IC (A) hFE – IC 10 10000 1000 100 0 001 0.01 0.1 1 10 Common emitter VCE = 2 V Single nonrepetitive pulse 25 Ta = 100°C -55 |
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