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MGSF3441VT3 数据表(PDF) 1 Page - Motorola, Inc |
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MGSF3441VT3 数据表(HTML) 1 Page - Motorola, Inc |
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1 / 6 page ![]() Preliminary Information Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine ™ Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, power management in portable and battery– powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature TSOP 6 Surface Mount Package Saves Board Space • Visit our Web Site at http://www.mot–sps.com/ospd MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 20 Vdc Gate–to–Source Voltage — Continuous VGS ± 8.0 Vdc Drain Current — Continuous @ TA = 25°C — Pulsed Drain Current (tp ≤ 10 µs) ID IDM 3.3 20 A Total Power Dissipation @ TA = 25°C Mounted on FR4 t 5 sec PD 2.0 W Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Thermal Resistance — Junction–to–Ambient R θJA 128 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C ORDERING INFORMATION Device Reel Size Tape Width Quantity MGSF3441VT1 7 ″ 8 mm embossed tape 3000 MGSF3441VT3 13 ″ 8 mm embossed tape 10,000 GreenLine is a trademark of Motorola, Inc. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by MGSF3441VT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA CASE 318G–02, Style 1 TSOP 6 PLASTIC MGSF3441VT1 P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 78 mΩ (TYP) Motorola Preferred Device ™ D D D G D S DRAIN 3 GATE SOURCE 4 6 5 2 1 © Motorola, Inc. 1997 ™ |
类似零件编号 - MGSF3441VT3 |
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类似说明 - MGSF3441VT3 |
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