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ST3DV520E 数据表(PDF) 9 Page - STMicroelectronics |
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ST3DV520E 数据表(HTML) 9 Page - STMicroelectronics |
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9 / 19 page ![]() ST3DV520E Electrical characteristics Doc ID 18318 Rev 1 9/19 Figure 3. Diagram for suggested VDD decoupling 1. Applicable for system level ESD test Figure 4. Test circuit for leakage current (IOFF) 1 4 6 9 10 13 16 18 GND VDD GND GND VDD GND GND VDD 21 24 27 28 33 38 39 44 DUT 49 50 53 55 56 GND VDD GND GND Note: 100nF Capacitors must be used as local bypass capacitors between the adjacent VDD and GND pairs (total 7) C=2uF or 4.7uF 1 1 |
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